Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a

Pure Ge is grown on Si substrate to control the release of the strain in the heterostructure, which is due to the 4.2% lattice misfit between Ge and Si. In this letter, an innovative approach of multi-buffer layers is proposed for the epitaxial growth of high quality Ge thin films on Si (001) substr