Selective epitaxial growth of Ge nanodots with ultra thin porous alumina membran
We demonstrate that ultra-thin porous alumina membrane (PAM) is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy (MBE) method. Ordered Ge nanodot arrays
下载地址
用户评论