Investigation of boron oxygen complex in p type compensated Czochralski silicon

Name: Investigation of boron oxygen complex in p type compensated Czochralski silicon
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上传者：wanily40349 2020-07-18 05:25:58上传 PDF文件 448.56KB 热度 58次

p型补偿直拉硅中硼氧复合体的研究，吴以超，余学功，本文研究了p型补偿直拉硅单晶中引起电池光衰减效应的硼氧复合体的性质。通过采用双指数函数拟合的方法，发现硼氧复合体的慢过程�

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Investigation of boron oxygen complex in p type compensated Czochralski silicon

p型补偿直拉硅中硼氧复合体的研究，吴以超，余学功，本文研究了p型补偿直拉硅单晶中引起电池光衰减效应的...

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