Metamorphic In0.53Ga0.47As p i n photodetector grown on GaAs substrates by low p
Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low-temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-micron optical radiation, corresponding to an
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