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  4. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche

上传者: 2021-04-17 23:25:47上传 PDF文件 288.54KB 热度 21次
We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.
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