Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs

Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate. Dark-current densities of 7.2 x 10(-7) A/cm(2) at 0 V and 3.6 x 10(-4) A/cm(2) at -5 V, a high quantum efficiency of 74.4 % at 1546 nm, and a 3-dB bandwidth up