Post growth annealing study of heavily Ga doped zinc oxide grown by radio freque

Heavily doped Ga-doped ZnO (resistivity similar to 8 x 10(-4) Omega cm and optical transmittance 96%) were fabricated by radio frequency magnetron sputtering. Post-growth annealing studies in H-2-Ar and pure Ar atmospheres were conducted. No noticeable thermal-induced change in the Ga depth profile