High stability and linear tuning wavelength tunable resonant cavity enhanced pho

A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In0.25Ga0.75As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V