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Physically based model for trapping and self heating effects in 4H SiC MESFETs

上传者: 2021-02-24 19:25:26上传 PDF文件 394.17KB 热度 7次
In order to accurately and simply extract the trapping parameters in SiC metal semiconductor field effect transistors (MESFETs) a method is proposed based on device dc and ac small-signal models. By combining modeling techniques, material physics, and measured device characteristics, we are able to
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