Structural and electrical properties of co evaporated In Garich CIGS thin films

The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400°C followed by co-evaporation of elemental Cu and Se at 55°C.We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu(In,Ga)