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  4. Demonstration of InAlN/AlGaN high electron mobility transistorswith an enhanced

Demonstration of InAlN/AlGaN high electron mobility transistorswith an enhanced

上传者: 2021-02-19 11:53:01上传 PDF文件 1.77MB 热度 16次
Demonstration of InAlN/AlGaN high electron mobility transistorswith an enhanced breakdown voltage by pulsed metal organicchemical vapor deposition
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