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  4. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with

Characteristic analysis of new AlGaN/GaN high electron mobility transistor with

上传者: 2021-02-08 14:42:06上传 PDF文件 2.84MB 热度 14次
Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer
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