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Feasibility analysis of junction temperature measurement for GaN based high powe

上传者: 2021-02-08 19:36:59上传 PDF文件 279.64KB 热度 22次
Transient thermal impedance of GaN-based high-power white light emitting diodes (LEDs) is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature (JT) rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks ar
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