砷化镓注锡的红宝石脉冲激光退火

Samples of GaAs implanted with tin were irradiated with a Q-switohed ruby laser (-1J/cm2, 30-40 ns). Investigation on proton channeling and electron diffraction showed that the amorphous layer of samples implanted with 60 keV or 300 keV Sn ions was recrystallized by laser irradiation, and the dopant