Effect of oxygen flow rate on the properties of SiOx films deposited by reactive
SiOx (x=0--2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate (OFR) changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction
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