Laser induced crystallization of as deposited amorphous Ge2Sb2Te5 films

Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge2Sb2Te5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the reflectivity contrast increases from 0%-2% to 14%-16%, which indicates the structure