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Influence of silicon on the thermally induced crystallization process of Si Sb4T

上传者: 2021-04-08 17:10:56上传 PDF文件 2.13MB 热度 31次
Si-Sb4Te phase change thin films with different silicon contents have been investigated by in situ heating technique in transmission electron microscopy (TEM). The studies show that Si-doping can significantly improve the thermal stability of Si-Sb4Te thin films, refine their grain size, and change
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