InGaN/GaN laser diode characterization and quantum well number effect

The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN/GaN laser diodes (LDs) is determined and investigated. The 3-nm-thick In_{0.13}Ga_{0.87}N wells and two 6-nm-thick GaN barriers are selected as an active region for Fabry-Perot (FP) cavity waveguide