White light emission from InGaN/GaN quantum well microrings grown by selective a

Monolithic white-light-emitting diodes (white LEDs) without phosphors are demonstrated using InGaN/GaN multiple quantum wells (MQWs) grown on GaN microrings formed by selective area epitaxy on SiO2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a (0001) c-plane,