Highly tensile strained sub monolayer Ge nanostructure on GaSb studied by scanni

Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular.beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different.coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of.Ge on GaSb foll