Surface illuminated photon trapping high speed Ge on Si photodiodes with improve

In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency (EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% at 1550 nm with an intrinsic Ge layer of only 2 μm thi