IGBT Accelerated Aging Dataset: Preliminary Data from Thermal Stress

Preliminary data, derived from thermal stress-induced aging and characterization systems, contribute to the IGBT accelerated aging dataset. This dataset encompasses aging data from six devices, with one device subjected to direct current gate bias during aging, while the remaining devices undergo aging with signal gate bias squared. Multiple variables are recorded, including rapid measurements of gate voltage, collector-emitter voltage, and collector current in certain instances. The dataset is provided by the Prognostics CoE at NASA Ames.