infineon 650V IGBT 10us短路试验

infineon650VIGBT10us短路试验650VIGBT4:Theoptimizeddeviceforlargecurrentmoduleswith10sshort-circuitwithstandtimeAndreasHrtl,MarcoBssler,MartinKnecht,PeterKanschatInfineonTechnologiesAG,GermanyAbstractThispaperpresentsthenewInfineon650VIGBT4.DesignedespeciallyformediumandlargecurrentapplicationsInom>300A,incomparisonwiththe600VIGBT3thedeviceoffersabettersoftnessduringswitch-off,andahigherblockingvoltagecapability.Themeasuresusedtorealizethesefeaturesweretoincreasethechipthickness,toreducetheMOSchannelwidth,andtoenhancetheback-sideemit-terefficiency.Asaconsequence,alsotheshort-circuitrobustnessissignificantlyimproved.wasincreasedby50%.Asaresult,thenew1.