Reduction of threading dislocations in N polar GaN using a pseudomorphicaly grow
WereportonanimprovementforthecrystalqualityofN-polarGaNwithapseudomorphicalygrown graded-Al-fractionAlGaNinterlayerwhichintroducesstrainmanagementinheterostructureandbrings in theinclinationandannihilationofthreadingdislocations(TDs).Significant blockingofscrewandedge component TDsareobs
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