Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

An effect of the position of notch-doping layer in 1-mu m GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL) structure can efficiently reduce the TDs de