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  4. Stacking faults free zinc blende GaAs/AlGaAs axial heterostructure nanowires dur

Stacking faults free zinc blende GaAs/AlGaAs axial heterostructure nanowires dur

上传者: 2021-03-27 15:14:50上传 PDF文件 1.96MB 热度 9次
Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an a
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