First principle simulations on the effects of oxygen vacancy in HfO2 based RRAM

Name: First principle simulations on the effects of oxygen vacancy in HfO2 based RRAM
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Author: xmojie

上传者：xmojie 2021-03-14 04:32:52上传 PDF文件 13.04MB 热度 26次

First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

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First principle simulations on the effects of oxygen vacancy in HfO2based RRAM

First principle simulations on the effects of oxyg...

大小：13.04MB | 2021-03-14 04:32:52
Effect of oxygen vacancy on lattice and electronic properties of HfO2by means o

Effect of oxygen vacancy on lattice and electronic...

大小：993KB | 2021-02-26 19:07:50
First principle study of the influence of vacancy defects on optical properties

We employ plane-wave with ultrasoft pseudopotentia...

大小：865KB | 2021-02-09 07:10:49
基于HfO2的单极RRAM器件中的逐周期固有RESET统计信息

基于HfO2的单极RRAM器件中的逐周期固有RESET统计信息

大小：602KB | 2021-04-04 19:47:17
HfO2薄膜的电阻开关效应1

HfO2薄膜的电阻开关效应(1) • 几种存储器原理与性能比较 • 电致电阻材料与研究现状 • 电阻...

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αgeneralized resolution principle based on the lattice valued first order logic

α-generalized resolution principle based on the la...

大小：3.75MB | 2021-02-17 04:10:30
基于HfO2的RRAM的渐进式单极RESET过渡中的电压和功率控制机制

基于HfO2的RRAM的渐进式单极RESET过渡中的电压和功率控制机制

大小：1.23MB | 2021-04-04 19:47:14
Oxygen vacancy induced ferromagnetism in Ni doped ZnO films

空位诱导Ni掺杂ZnO的铁磁性，侯登录，，磁控溅射法制备了系列Ni掺杂ZnO薄膜，X射线研究结果表明...

大小：398KB | 2020-07-16 06:34:15
Multiscale analysis of single and multiple pulse laser induced damages in HfO2

Nanosecond single- and multiple-pulse laser damage...

大小：666KB | 2021-02-07 21:12:22
HfO2薄膜的光致发光谱与激发谱

利用电子束蒸发和自动晶控技术制备了氧化铪薄膜,并对薄膜进行了退火处理。通过光致发光(PL)光谱、光致...

大小：1.12MB | 2021-02-19 08:37:26
Annealing effects on residual stress of HfO2SiO2multilayers

HfO2/SiO2 multilayer films were deposited on BK7 g...

大小：300KB | 2021-02-28 22:26:43
γ射线对基于HfO2的电阻存储器件的影响

γ射线对基于HfO2的电阻存储器件的影响

大小：735KB | 2021-03-14 04:32:15
双离子束React溅射制备HfO2薄膜的性能

双离子束React溅射制备HfO2薄膜的性能

大小：525KB | 2021-03-14 04:32:42
HfO2薄膜折射率非均质性生长特性研究

HfO2薄膜折射率非均质性生长特性研究

大小：1.32MB | 2021-04-23 04:53:33
论文研究Stress Electric Field Dependent TDDB Characteristics of Ultra Thin HfN HfO2

超薄HfO2高K栅介质中电场依赖的时变击穿（TDDB）特性，杨红，萨宁，本文利用高温工艺制备了等效...

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Effects of water vapor in high vacuum chamber on the properties of HfO2films

The influence of water vapor content in high vacuu...

大小：206KB | 2021-02-28 20:32:39