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Lg=100 nm T shaped gate AlGaN/GaN HEMTs on Si substrate with non planar source/d

上传者: 2021-02-28 19:01:43上传 PDF文件 1.87MB 热度 9次
Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrate with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
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