1. 首页
  2. 数据库
  3. 其它
  4. Lg=100 nm T shaped gate AlGaN/GaN HEMTs on Si substrate with non planar source/d

Lg=100 nm T shaped gate AlGaN/GaN HEMTs on Si substrate with non planar source/d

上传者: 2021-02-28 19:01:43上传 PDF文件 1.87MB 热度 10次
Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrate with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
用户评论