Polarization induced hole doping in graded AlxGa1 xN (x=0.7 similar to 1) layer 上传者：caoyunmei 2021-02-27 02:52:55上传 PDF文件 817.18KB 热度 43次 Polarization induced hole doping in graded AlxGa1-xN (x=0.7 similar to 1) layer grown by molecular beam epitaxy 下载地址 用户评论 更多下载 下载地址 立即下载 用户评论 发表评论
