High Quality Pseudomorphic In 0.24 GaAs/GaAs Multi Quantum Well and Large Area T

The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameter