Nanocrystal enhanced near IR emission in the bismuth doped chalcogenide glasses
                                Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass a                            
                            
                            
                            
                        
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