In situ instant generation of an ultrabroadband near infrared emission center in

Bismuth (Bi)-doped photonic materials, which exhibit broadband near-infrared (NIR) luminescence (1000–1600 nm), are evolving into interesting gain media. However, the traditional methods have shown their limitations in enhancing Bi NIR emission, especially in the microregion. Consequently, the typical NIR emission has seldom been achieved in Bi-doped waveguides, which highly restricts the application of Bi-activated materials. Here, superbroadband Bi NIR emission is induced in situ instantly in