Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure

In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room temperature. By programming the proper compliance current, bipolar resistive switching performances of TiN/MgZnO/ZnO/Pt devices were stabilized; the dispersion of switching voltages and resistance state