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Resistive switching properties and physical mechanism of cobalt ferrite thin fil

上传者: 2021-02-23 12:13:33上传 PDF文件 1.48MB 热度 39次
We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrate
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