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Growth and characterization of InAs quantum dots with low density and long emiss

上传者: 2021-02-15 23:48:13上传 PDF文件 343.85KB 热度 26次
The growth parameters affecting the deposition of self-assembled InAs quantum dots (QDs) on GaAs substrate by low-pressure metal-organic chemical vapor deposition (MOCVD) are reported. The low-density InAs QDs (~5×108 cm-2) are achieved using high growth temperature and low InAs coverage. Photolumin
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