High performance 4H SiC p i n ultraviolet avalanche photodiodes with large activ

Ultraviolet (UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4H-SiC p-i-n avalanche photodiodes (APDs) with large active area (800 μm diameter) are reported. With the optimized epitaxial structure and device