Resonant Raman scattering in GaN single crystals and GaN based heterostructures:

The recent progress on Raman scattering in GaN single crystals and GaN/AlN heterostructures is reviewed. Anti-Stokes Raman scattering is used to determine electron-phonon scattering time and decay time constant for longitudinal-optical phonons. In a typical high electron mobility transistor based on