Characteristics and threshold voltage model of GaN based FinFET with recessed ga

Name: Characteristics and threshold voltage model of GaN based FinFET with recessed ga
Rating: 4.5 (45 reviews)
Author: lb45575

上传者：lb45575 2021-02-08 14:42:48上传 PDF文件 803.37KB 热度 45次

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

下载地址

用户评论

更多下载

下载地址

立即下载

用户评论

Characteristics and threshold voltage model of GaN based FinFET with recessed ga

Characteristics and threshold voltage model of GaN...

大小：803KB | 2021-02-08 14:42:48
High threshold voltage Normally off Recessed MOS gate AlGaN GaN HEMT with Large

High-threshold-voltage Normally-off Recessed MOS-g...

大小：1.25MB | 2021-02-19 23:28:59
Fabrication and Characteristics of GaN based Blue VCSEL

Fabrication and Characteristics of GaN-based Blue ...

大小：299KB | 2021-02-20 03:00:07
Lane change warning threshold based on driver perception characteristics

Lane change warning threshold based on driver perc...

大小：512KB | 2021-02-23 00:23:10
Low threshold voltage light emitting diode in silicon based standard CMOS techno

Low-voltage silicon (Si)-based light-emitting diod...

大小：1.29MB | 2021-02-27 13:20:29
Threshold Certificate based Encryption

Certificate-based encryption (CBE) is a newasymmet...

大小：572KB | 2021-02-27 06:45:58
Stimulated Brillouin scattering threshold dependent on temporal characteristics

The stimulated Brillouin scattering (SBS) threshol...

大小：471KB | 2021-02-24 04:49:38
Characteristics of the crystalline and luminescence properties of a plane GaN fi

A-plane GaN films are deposited on (302) \gamma-Li...

大小：8.06MB | 2021-04-04 07:38:05
Feature reduction method based on threshold optimization for case based reasonin

为提高案例推理(case-based reasoning,CBR)分类器的分类准确率并降低时间复杂度...

大小：768KB | 2021-02-21 22:57:25
A Near Threshold Voltage Startup Monolithic Boost Converter with Adaptive Sleepi

A Near-Threshold Voltage Startup Monolithic Boost ...

大小：768KB | 2021-02-08 14:42:53
Bayesian estimation for a univariate threshold stochastic volatility model with

带解释变量的门限随机波动模型的贝叶斯估计，杨凯，王德辉，本文基于MCMC方法研究了带解释变量的单变量...

大小：0B | 2020-05-15 12:26:17
Model Based Development

基于模型的软件开发过程，对项目管理人员和研发人员有很大的指导价值。

大小：0B | 2019-07-24 02:45:51
Thermal characteristics of GaN on diamond HEMTs Impact of anisotropic and inhom

Thermal characteristics of GaN-on-diamond HEMTs: I...

大小：384KB | 2021-02-19 23:28:40
Investigation of Threshold Voltage Distribution Temperature Dependence in3D NAN

Investigation of Threshold Voltage Distribution Te...

大小：524KB | 2021-02-19 15:27:39
A Threshold Based Kalman Filter with Recursive Covariance Estimation

A Threshold-Based Kalman Filter with Recursive Cov...

大小：630KB | 2021-04-06 17:57:56
Resonant Raman scattering in GaN single crystals and GaN based heterostructures

The recent progress on Raman scattering in GaN sin...

大小：391KB | 2021-02-08 20:51:46