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  4. 反向电压应力对F注入AlGaN/GaN肖特基势垒二极管的影响

反向电压应力对F注入AlGaN/GaN肖特基势垒二极管的影响

上传者: 2021-02-07 17:42:47上传 PDF文件 256KB 热度 22次
The influences of reverse voltage stress on fluorine plasma treated AlGaN/GaN Schottky barrier diodes (SBDs) have been investigated. The carrier transportprocess during the reverse voltage stress is analyzed indetail, which can fully explain the various phenomena of the stressed devices. Furtherm
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