IC Haus iC MFP I/O接口(I/O Circuits).pdf

IC-Haus iC-MFP I/O接口（I/O Circuits）pdf,IC-Haus iC-MFP I/O接口（I/O Circuits）IC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, Page 3/13PACKAGES QFN24 to JEDECPIN CONFIGURATION QFN24PIN FUNCTIONS(top view)No. Name FunctionNOUT1 Output channel 1○i23:22}2120:192 VB Supply Voltage3 Vbr Supply Voltage(R)4 EN5 Enable input lo-level = VB-5V5 En10 Enable input lo-level= VB-10V6 IN1 Input channel 1iC7 N2 Input channel 28 IN3 Input channel 39|N4Input channel 4MEP10 IN5 Input channel 5code11|N6Input channel 612 IN7 Input channel 713|N8out channel 814 NoK Output inverted status15 ENFS Enable input full scale lo-level GND16 GNDR Ground(r1217 Gnd Ground18 NOUT8 Output channel 819 NOUT7 Output channel 720 NOUT6 Output channel 621 NOUT5 Output ch22 NOUT4 Output channel 423 NoUT3 Output cha24 NoUT2 Output channel 2IC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, Page 4/13ABSOLUTE MAXIMUM RATINGSBeyond these values damage may occur; device operation is not guaranteedItem ParameterConditionsFigUnitMiMaxG001 VB, VBR Supply Voltage-0.3G0020Voltage at NoUT1.8, NOK-0.340G003OVoltage at IN1.8, EN5, EN10, ENFS-0.340G004 V(GNDR)Voltage at GNDR referenced to GND0.30.3GO05 V(GND)Voltage at GND referenced to GNDR-0GO06 V(VBR) Voltage at VBR referenced to VB-0.30.3G007V(B)Voltage at VB referenced to VBR-0.30.3G008mx()Current in nout1. 8. NOK. IN1.8-1010mAEN5 EN10 ENFSGoo Imx(Current in VB. VBR10mAG010|mx(Current in GND. GNDR10mAG011|aESD susceptibility at all pinsHBM 100 pF discharged through 1.5 kS2G012Operating Junction TemperatureGO13 TsStorage Temperature Range55125THERMAL DATAOperating Conditions: VB=VBR=4.5. 40V, GND= GNDR=OVItem SymbolParameterConditionsFUnitMin. Typ. MaTo1 TaOperating Ambient Temperature RangeThermal Resistance Chip/Ambient SMD assembly, no additional cooling75K/All voltages are referenced to ground unless otherwise statedAll currents into the device pins are positive; all currents out of the device pins are negativeIC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, Page 5/13ELECTRICAL CHARACTERISTICSOperating Conditions: VB=VBR=4.5.40V, GND= GNDR=0V,Tj=-40.125C unless otherwise statedItem Symbol ParameterConditionsT] FigUnitMin.TyMaxTotal device001MBPermissible Supply Voltage4.540002|(vB)Supply Current in VBNo load en5=Io En10=lo1.23.6mAENFS= loSupply Current in VBNo load. en5=hi en10=o3.26.6mAENFS =lo IN1..8= hvB=8..40V004vB)Supply Current in VBNo load en5= lo En10= hi3.268mAENFS =IO, IN1.8=hiVB=13...40V005(vB)Supply Current in VBNo load en5=lo en10=lo6.6mAENFS hi. N1.8=hVB=4.5..40V006(VBR)Supply Current in VBRNo load. all noutx= lotbd007|(GNDCurrent in gndNo load7mA008(GNDR)Current in GNDRNo loadtbdMACurrent Driver NoUT1.8101 VcOhiClamp voltage hi10=10 mA4260102 CoLoClamp Voltage lo referenced to 10=-10 mA-04the lower voltage of GND, GNDR103Ⅳs()hiSaturation Voltage hi referenced Vs(hi=VB-vOto yB10=-05 mA0.2I()=-2mA0.8104 Vs()lo Saturation Voltage lo referenced ENFS =hi, INx=hi0.2to Gnd)=0.5mA0.810=2 mA105|routput Voltage regulated, no load Vro=vo-VB, EN5=hi,-5-5-4.7INX hi, 10=OmA106№r()Output Voltage regulated, no load Vr(=vO-VB, EN10= hi10.610-94INx=hi, I0=OmA107R0Output ResistanceEN10=hi or en5= hi INx= hi00g2IQ=±2mA108 VI(NOUTX)Output VoltageI(NOUTX)=-2 HA600mvVI(=VBR-VO, VB op109pu(0ull-Up CurrentVBR-V(NOUTx)=1V,VB open-10110RpuoPull-Up Resistor at noUTxVBR-V(NOUTX)=10V, VB open140200300KQreferenced to VBR111 Rpu(Pull-Up Resistor at NOUTXVBR-V(NOUTX)=40V, VB open200400600referenced to VBr112 Isc()loShort circuit current loV(=0.8V.YB10113 lsc(hi Short circuit current hiv()=0.vB-0.8V103.6A114sh(Output Voltage at short circuit of Vsh()=VO-VB; EN5 -hitwo outputsAt two different input signals hi115 Vsh( Output Voltage at short circuit of Vsh()=V(-VB EN10=hiortwo outputsENFS= hiAt two different input signals hiand lo116 VtOhiThreshold Voltage hi monitoring Vt(=Vr(+ VB-VOor2.2117 ToLoThreshold Voltage lo monitoring Vt()=Vr(+VB-VO)or0.8ator)=V()118 Vt(hys HysteresisVtOhys= Vtohi-Vt(lo300mVIC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev Al, Page 6/13ELECTRICAL CHARACTERISTICSOperating Conditions: VB=VBR=4.5.40V, GND= GNDR=0V,Tj=-40.125C unless otherwise statedItem Symbol ParameterConditionsT] FigUnitin.TyMaxInput IN1.8, EN5, EN10, ENFS201 VcOhiClamp Voltage hi10=10mA60202 Vc()loClamp Voltage lo referenced to 10)=-10 mA-0.4the lower voltage of GND, GNDR203 Vt(hiThreshold Voltage hi1.15204Vt()oThreshold Voltage Io0.81.05205 Vt(Ohys Input HyVtohys=Vtohi-vtolo200400206|pd1()Pull-Down Current 10. 4V14V45uud208cn()Input CapacitanceVAAFA209(Leakage CurrentVB, VBR=0V,V0=0.40V-10Supply and Temperature Monitor301ⅣBonTurn-On Threshold VB3.84.3302 BOffTurn-Off Threshold VBDecreasing voltage VB3.44.0303 VBhys HysteresisVBhys= VBon-VBotf200304 ToffTurn-Off TemperatureIncreasing temperature145160180305TonITurn-On temperatureDecreasing temperature130147170c306TThys=Toff-To13Ground monitor gNd, ndr401 Vt(hiThreshold Voltage hi gnDReferenced to NdR270mvMonitor402t()loThreshold voltage hi GNDReferenced to NDR403 Vt(hysVt(hys =Vt(hi-vt(lo560404|(hiThreshold Voltage hi GNDRReferenced to gnd270mV405 Vt(lohreshold Voltage lo GNDRReferenced to gndMonitor406 ToHHYsteresIsVtohys=Vtohi-Vt(lo1060407Ⅳc(hiClamp Voltage gndr hi10=1 mA04referenced to gnd408Vc(lo Clamp Voltage GNDR lo1O1 mA-0.4referenced to gNdStatus output NoK501 Vc(NOK)hi Clamp Voltage hi)=10mA502 Vc(NOK)lo Clamp Voltage lo referenced to 10=-10 mA-0.4the lower voltage of GND, GNDR503(NOK) Leakage CurrentGND NOUTX(IN, EN5 hi >lo)>90 %NOUTCLoado= 2nF904 tp(NOUTx)Propagation delay({N,EN5}o→hi)→10%NOUT58.1μsNX.EN5→ NOUTX({IN,EN5}i→lo)→90%NoUTCLoad(=5nF905 tp(NOUTx) Propagation delay(IN, EN10Jlo hi): 10 %NOUT0.71.6NX,EN10→ NOUTX({N,EN10}hi→|o)→90%NOUTCLoad(=100 pl906 tp(NOUTx)Propagation delay(IN, EN10Jlo-hi)-10%NOUT2.3NX,EN10→ NOUTXKIN, EN10]hi-lo)-90%NOUTCLoad(=1 nF907 tp(NOUTx) Propagation delay({N,EN10Jo→h)→10%NOUT3.97.1NX,EN10→ NOUTX({N,EN10}hi→|o)→90%NOUTCLoad()=2nF908 tp(NOUTx)Propagation delay(IN, EN10Jlo- hi)-10%NOUT916NX,EN10→ NOUTXIN,EN10hi→|o)→90%NOUTCLoad0=5nF909 tp(NOUTx) Propagation delay({N,ENFS}o→h)→10%NouT1.4NX.ENFs→ NOUTX({IN,ENFS}hi→lo)→90%NoUTCLoad(=100 pF910 tp(NOUTx)Propagation delay({N,ENFS}o→hi)→10%NOUT5.298usNX ENFS NOUTX(IN, ENFShi >Io)>90 %NOUTCLoad(=1 nF911 tp(NOUTX) Propagation delay({IN, ENFSyIo→hi)→10%NoUT9.216.7|sNx,ENFS→ NOUTX({N, ENFS]hi→|o)→90%NOUT912 tp(NOUTx) Propagation delay(IN, ENFSHo > hi)>10%NOUTNX.ENFS→ NOUTXN, ENFS hi→lo)→90%NoUTCLoad(=5 nF913 dv()/dt Slew rateVB=24V, CLoad(=100 pFV/US914 dv(/dt Slew rateVB=24V, CLoad(=1nF2.24.915 dV(/dtSlew rateVB=24 V, CLoad0=2nF1.22.5 V/us916 dv(dt Slew rateVB=24, CLoad(=5nF0.51.2IC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, page 8/13ELECTRICAL CHARACTERISTICS: Diagrams1V(INx EN5 EN10, ENFS)V(NOUTx90%tp(NOUTXFigure 1: Propagation delaysIC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, Page 9/13DESCRIPTION OF FUNCTIONSLo-level output configurationThe device iC-mFP has three adjustable lo-levels fordriving P-channel fets. The configured lo-level is com-mon to all outputs noUTx and the minimum level isGND potential. The lo-level configuration inputs areused simultaneous for enabling the lo-level at the outVINOUT<]Vr()puts NOUTx. The hi-level at exactly one input EN5EN10 or ENFS configure the voltage of lo-level and en-able the outputs If more than one of these inputs havehi-level the outputs remains disabled. The lo-level VB5V(configured with EN5= hi) and VB-10V(configured with EN10= hi) are internally generated by a voltage reference and regulated. The lo-level GND(configured with enFS= hi) is an unregulated connectionFigure 3: Output characteristic of the regulatedto GND. In this case the voltage swing depends directlypush-pull-output at NOUTXfrom the power supply VBOutput characteristic of the lowside transistorThe lowside output transistors at the eight channelsdemonstrate a resistive behavior with low voltageV(NOUTX and behave as a current sink with finite out-Output characteristics of the highside transistor put resistance with higher voltagesThe highside output transistors at the eight channels(NTx▲demonstrate a resistive behavior with low voltage (VBV(NOUTX)) and behave as a current source with fi-nite output resistance with higher voltagesImAlFigure 4: Output characteristic of the lowside tran-sistor at noutxStatus output NoKThe status output NOK is a current limited 40V piopen-drain output. The output transistor is switched onif the lo-level of the outputs Noutx are enabled withFigure 2: Output characteristic of the highside tran-exactly one pin ENX, the outputs have reached the voltsistor at noutxage levels defined by the inputs INx, the power supplyvoltage is above the power-on threshold, the temperature is below the switch off temperature and all powersupply pins are connectedOutput characteristic of the regulated push-pull-output at noutxThe lo-level VB-5V and VB-10V is generated witha regulated push-pull output and demonstrate a resistine behavior with low voltage changes and behaveas a current source with finite output resistance withner voltage changesIC-MFP8-FOLD FAIL-SAFE P-FET DRIVERiC HausRev al, Page 10/13-down currentslpd(▲rder to enhance noise immunity with limited powerIpd10dissipation at inputs INX, EN5, EN10 und ENFS thepull-down currents at these pins have two stages. Witha rise in voltage at input pins INx, EN5, EN10 undENFS the pull-down current remains high until VtohiIpd2Ovo decreasing( Electrical Characteristics No. 203); above this thresh-old the device switches to a lower pull-down currentIf the voltage falls below tolo(Electrical Character-VoloToniistics No 204 ), the device switches back to a higherpull-down currentFigure 5: Pull-down currents at INX, EN5, EN10 andENFSDETECTING SINGLE ERRORSIf single errors are detected, safety-relevant applicaNOu▲VB -V'NOUTxtions require externally connected switching transistorsto be specifically shut down. Single errors can occurwhen a pin is open(due to a disconnected bondingwire or a bad solder connection, for example )or whentwo pins are short-circuitedWhen two output of different logic levels are short-circuited, the driving capability of the highside driverwill predominate, keeping the connected P-channelFETs in a safe shutdown stateFigure 6: Output characeristics at noUTx with lossNith open pins VB, VBR, Gnd or GNDR iC-MFPof br gnd or ndrswitches the output stages to a safe, predefined highstate via pull-up resistors and current sources at the Loss of VB potentialoutputs, subsequently shutting down any externally If power supply potential is not longer applied to VBconnected P-channel fetsthe output stages are shut down and the outputs tiedto VBR via internal pull-up resistors with a typical valueLoss of VBR potentialof 200 koIf power supply potential is no longer applied to theI(NOUTXVBR-pin, the output stage lowside drivers are shutVB-V NOUTx)down and the outputs actively tied to VB via the high-side driversLoss of GND potentialIf ground potential is no longer applied to the GND-pinthe output stage lowside drivers are shut down and theoutputs actively tied to VB via the highside driversLoss of GNdr potentialIf ground potential is no longer applied to the GNDRpin, the output stage lowside drivers are shut down and Figure 7: Output characeristics at noUTX with lossthe outputs actively tied to VB via the highside driversof b