Highly sensitive optical receivers

关于光通信接收机设计的很好的书籍，重点是跨阻放大器的设计Springer series inADVANCED MICROELECTRONICSSeries editors: K. itoh T Lee t sakurai w.m.c. sansen D. schmitt-LandsiedelThe Springer Series in Advanced Microelectronics provides systematic information onall the topics relevant for the design, processing, and manufacturing of microelectronicdevices. The books, each prepared by leading researchers or engineers in their fields,cover the basic and advanced aspects of topics such as wafer processing, materials,device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and thevolumes will appeal to practicing engineers as well as research scientists18 Microcontrollers in practiceBy I. Susnea and m. mitescu19 Gettering Defects in SemiconductorsBy V.A. Perevoschikov and V D. Skoupov20 Low Power Vco Design in CMOsBy M. TieboutContinuous-Time Sigma-Delta A/D Conversionndamentals, Performance Limits and Robust ImplementationsBy M. Ortmanns and f. gerfe22 Detection and Signal ProcessingTechnical realizationBy W.]. WittemanHighly sensitive Optical receiverBy k Schneider and H K Zimmermann24 Bonding in Microsystem TechnologyBy J.A. DziubaVolumes 1-17 are listed at the end of the bookK Schneider H. zimmermannHighly SensitiveOptical receiversWith 191 Figures and 25 TablespIringerDipl. -Ing. Dr techn. Kerstin SchneiderUniv. Professor Dr -Ing. Horst ZimmermannInstitute for Electrical Measurements and Circuit Design, Vienna University of TechnologyGusshausstr. 25/354, A-104o Wien, AustriaE-Mail: kerstin. schneider@tuwien ac at, horst. zimmermann @ieee. orgSeries editors:Dr. Kiyoo itohHitachi Ltd, Central Research Laboratory, 1-28o Higashi-KoigakuboKokubunji-shi, Tokyo 185-8601, JapanProfessor thomas leeStanford University, Department of Electrical Engineering, 420 Via Palou Mall, CIS-205Stanford, CA 94305-4070, USAProfessor Takayasu SakuraiCenter for Collaborative Research, University of Tokyo, 7-22-1 Roppongito-ku, TokyDanProfessor Willy M. C SansenKatholieke Universiteit Leuven, ESAT-MICAS, Kasteelpark Arenberg 103001 Leuven, BelgiumProfessor doris schnitt-LandsiedelTechnische Universitat munchen, Lehrstuhl fur Technische elektronikTheresienstrasse 90, Gebaude N3, 8029o Munchen, GermanyISBN-10 3-540-29613-1 Springer Berlin Heidelberg New YorkISBN-13 978-3-540-29613-3 Springer Berlin Heidelberg New YorkLibrary of Congress Conlrol Number: 2006926218This work is subject to copyright. All rights are reserved, whether the whole or part of the material isconcerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcastingreproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication orparts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in itscurrent version, and permission for use must always be obtained from Springer Verlag. Violations are liableto prosecution under the German Copyright Law.Springer is a part of Springer Science+Business MedO Springer Berlin Heidelberg 2006Printed in the netherlandsThe use of general descriptive names, registered names, trademarks, etc. in this publication does not imply,even in the absence of a specific statement, that such names are exempt from the relevant protective laws andregulations and therefore free for general use.Camera-ready by the Author and SPi using a Springer IlEX macro packageCover concept by e Studio Calmar Steinen using a background picture from Photo Studio"SONOCourtesy of Mr. Yukio Sono, 3-18-4 Uchi-Kanda, Chiyoda-ku, TokyoCover dcsign: design d production GmbH, Hcidclbcrgd-Gr54321Publisher services. pondichePrefaceThe growing demand for high-speed, broadband dat a communication mo-tivates the development of low-cost, high-performance optical receivers forfiber-optical networks. This book sets its focus especially on highly sensitivereceivers with medium and high speed capability for the last mile"connection in fiber-to-the-home(FTTH) systems. These connections are normallyrealized with infrared light with wavelengths of 1310 and 1540 nm. This factmakes it necessary for silicon optical receivers to use an external ge or III/Vsemiconductor bascd photodiodc. Thercfore this book dcals with optical rcceivers for detection of infrared light, including all the problems emergingfrom an external photodiode, such as very high input-node capacitance some-where in the order of pF, compared to an integrated photodiode where theinlput-llode capacitance is about an order of magnitude less, problens dueto bond-wire parasitics at the input-lode, etc. The influence of these problems can be clearly seen in the performance of optical receivers. The highinput-nodc capacitance, for cxamplc, strongly influcnccs the bandwidth andthe sensitivitCompared to the book Integrated Silicon Optoelectronics of one of theauthors, which concentrates on physics and integration of photodetectors inmodern silicon bipolar, CMOS and BiCMOS processes, descriptions of fabrication technologies and properties of integrated photodetectors, annd SiliconOptoelectronic Integrated Circuits, which goes deeper into the details of thecircuit design of ICs with integrated photodiodes for a wide variety of applications, this book concentrates on circuit design for optical receivers withexterna.I photodiodes for optical communication. The main subject of HighlySensitive Optical Receivers is the description of the state-of-the-art of lownoise silicon amplifiers and the comparison of bipolar, CMOs, BiCMOS, aswell as siGe amplifiersThis new book is a summary of fundamental theory and a presentation ofstate-of-the-art optical receiver circuits and designs. Recent optical receiversdcvclopcd by the authors show the rapid progress in optical rcccivcr designⅤIPrefaceThe first chapter explains the motivation why all optical receivers designedby the authors are done in deep-sub-micron Cmos technologyAlthough these deep-sub-micron CMOS technologies cause a lot of probIcms, duc to low powcr supply voltage, low early voltage and so on, this bookwill show that these technologies are attractive and interesting for low-noiseoptica. l receivers for medium and high data rate applicationsIn particular, the newest deep-sub-micron CMOs low-noise amplifier topolo-gies are described in detail addressing the challenging application in opti-cal burst-Inlode receivers. Thereby the excellent noise properties of deep-submicron CMOS receivers and fast gain switching capability are highlighted.Anew approach for solving the stability problcm rcsulting from gain switchingis described. This book shows how to solve the difficulties in circuit designwith deep-sub-micron CMOs technologies and how to use the benefits of thetechnology as for example the possibility to easily integrate the analog andthe digital part in systems-on-chip(SoCs). Using a standard digital deep-subunicron CMOS process for allalog design has the disadvantage of high devicetolerances to deal with, but avoids costs for technology development for analogprocess extensionsIn the beginning of the book in Chap. 1 the motivation for burst-modccommunication and the incentive to usc systcms-on-chip in dccp-sub-micronCMOS technology are discussedIn Chap 2 different kinds of networks are described. Furthermorecontinuous-mode and burst-mode access are compared. The additionalrequirements for burst-Illode optical receivers will be discussed and the advan-tages of time-division-multiplex access(TDMA)will be pointed out. The increasing importancc of burst-modc rcccivcrs is reflected in thc growing amountof publications on this topic. In the beginning of the 1090s thc first paperson burst-mode receivers were published. The number rapidly increased in thefollowing years and is still growing In Chap 2, fundamental parts of opticaleceiver front-ends are also described. An essential part of optical receiversare the photodetectors. Photodetectors and especially SiGe photodetectorstherefore, are discussed in Chap 3. The main focus of attention is on thepreamplifier, being usually a transimpedance amplifier, in Chap 4. NevertheIcss. also main and limiting amplifiers arc discusscdChapter 5 gives a short overview of an SiGe hetero,junction bipolar technology, as well as some more details about. the deep-Sub-micron CMOs processesused for the designs described in Chap 9AC-analysis as well as stability analysis of several designs are contained inChap 6. After the feedback theory a transimpedance amplifier with an idealamplifier is described. This is followed by an analysis of realized circuitsAfterwards, in Chap. 7, integrated circuit technologies of current interestarc dcscribed. BiCMOS, SiGc heterojunction bipolar, submicron CMOS anddeep-sub-micron CMOs technologies are compared and the advantages anddisadvantages of each concerning noise are described. The device propertiesPrefaceⅴIIare compared to the properties of ideal devices and the effects of down-scalingtechnologies are describedIn Chap 8 an overview of the state of the art of bicmos, Sigehctcrojunction-bipolar and CMOS optical rcccivcrs in thc litcraturc is givcnhapter 9 summarizes the simulation environment and component models forcircuit, design and describes the measurement set-up and the circuits as well asprinted circuit boards for characterization. Afterwards the circuits and prop-erties of several advanced optical Cmos receivers and optical burst-modereceivers designed at the Institute for Electrical Measurements and CircuitDesign at Vienna University of Technology in 0. 18 um and 0. 12 um standarddigital CMOS are described in detail. Finally a summary of the characterizedperformance of the optical receivers is done. A comparison of the different de-signs and their results for optical receivers known from the literature followsThe aut hors would like to thank t heir colleagues at the institute for flec-trical Measurements and Circuit Design at Vienna University of Technologfor fruitful discussion and their valuable support, especially Franz SchloglRobert Swoboda, Michael FOrtsch, Jurgen Leeb and Alexander Nemecek aswell as the head of the institute, Gottfried Magerl, for his great support towards a quick start of rcscarch. Furthermore spccial thanks arc directed toA. Wicsbaucr, J. Hauptmann, M. Haas, and A. Martin from Infincon Tcchnologies DC Villach and DC Vienna. for their constant financial and technicalsupport as well as the opportunity to use the design environmentVienna.une 2006Kerstin. Schneidermlorst zimmermannFurthermore, I want to thank Ily parents, Bernd and Petra, for their supportduring my studies and especially Rainer for their patience and understandingVienna. June 2006Kerstin schneiderContents1 Introduction2 Fundamentals52.1 Point-to-Point Versus Point-to-Multipoint Access1. 1 Point-to-Point2.1.2 Point-to-Multipoint Accoss62.2 Continuous-Mode versus burst-Mode communication2.2.1 Continuous-Mode Communication2.2.2 Burst-Mode Communicatio2.3 CoInponents of the Optical Receiver Front-EIld2.4 Optical fibers3 Photodetectors3.1 Basics of photodetectors3.2 Avalanche photodiode..183.3 Pin Photodiode.....,.183.4 SiGe photodetectors193.4.1 Hctcrocpitaxial Growth193.4.2 Absorption Coefficient of SiGe alloys3.4.3 Ge-on-Si TR Photodetectors3. 4.4 SiGeC13.4.5 SiGe/ Si pin Hetero Bipolar Transistor Integration4 Amplifi354.1 Prea.mplifier, Transimpedance Ampl4. 2 Main Amplifier, Limiting Amplifier4.2.1 Limiting Amplifier4.2.2 AGC Amplifier.37Content:5 Integrated Circuit Technology5.1 SiGe Heterojunction Bipolar(HBT)5.2 Deep-Sub-Micron CMOSG Transimpedance Amplifier Theory...516.1 Feedback Theory6.1.1 Shunt- Shunt Feedback516.1.2 Input and Output resistance6.2 TIA with Idcal Amplifier6.3 TIA with Frequency-Dependent Open-Loop gain586.3.1 TIA with Folded-Cascode Amplifier Stage6. 3. 2 TIA with Inverter Amplifier Stages636.3.3 Transimpedance-Gain Switching and Stability of TIAwith inverter AMplifier Stages706.3.4 Three-Stage Burst-Mode TIA with Internal Feedback. 766.3.5 Transimpedance-Gain Switching and Stability ofThrcc-Stagc Burst-Modc TIA with Intcrnal Fccdback.. 797 Noise Theory7.1 Sensitivity and Power Penalty7.1.1 Bit-Error Rate7. 1.2 Sensitiv897. 1.3 Power Penalty7.2 Noise Models of Components7.2.1 Resistor Noise Model922.2 Bipolar-anld Heterojunctioll-Bipolar-Transistor NoiseModel7.2.3 Field-Effect-Transistor Noise Model7.3 Noise Models of Transimpedance Amplifier7.3.1 Ideal-Amplifier TIA997.3.2 TIA with Bipolar and Heterojunction Bipolar InputStage1007.3.3 TIA with MOs Input Stage7.3.4 Comparison of Bipolar and Field-Effect TransistorCircuits Based on Noise Theory...1017. 4 Noise Models of More Complex TIAs in Deep-Sub-micronCMOS Technology..………1047. 4.1 Noise Analysis of Folded-Cascode TIA.,,,1047. 4.2 TIA with CMOS-lnverter Input Circuit8 State of the ar8. 1 Silicon Bipolar and Bicmos Optical rcccivcrs.1158.2 SiGe Hetero junction Bipolar and SiGe bicMOs OpticalReceivers1218.3 Silicon CMOs Optical receivers126