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Advanced Techniques for Extracting Parameters in Nonlinear Transistor Models

上传者: 2023-11-11 14:29:11上传 PDF文件 13.41MB 热度 16次

This article delves into a comprehensive exploration of modeling and extracting parameters for nonlinear active devices. The focus is on sophisticated techniques employed in the process, providing a detailed understanding of the complexities involved. Nonlinear transistor models play a crucial role in electronic circuit design, especially in high-frequency applications. The article covers a range of advanced methods used for accurate parameter extraction, considering the intricacies of nonlinear behavior in active devices. By gaining insights into these techniques, engineers and researchers can enhance their ability to design circuits with improved accuracy and efficiency. The content encompasses various aspects, including mathematical formulations, experimental procedures, and the significance of accurate parameter values in transistor modeling.

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