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IRF630英文资料

上传者: 2022-12-09 01:44:19上传 RAR文件 167.1008 KB 热度 4次

combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applicaTIons.

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