Low Power Silicon BJT LNA for 1.9GHz

Abstract:Atwo-stage1.9GHzmonolithiclow-noiseamplifier(LNA)withameasurednoisefigureof2.3dBandanassociatedgainof15dBwasfabricatedinastandardsiliconbipolartransistorarray.Itdissipates5.2mWfroma3Vsupplyincludingthebiascircuitry.Inputreturnlossandisolationare-9dBand-20dB,respectively.Maxim>AppNotes>ASICsWIRELESS,RF,ANDCABLEKeywords:Maxim,QuickChip,siliconbipolar,LNA,1.9GHz,QuickChip9,semi-custom,ASIC,lownoiseMar17,2000amplifier,quickchipAPPLICATIONNOTE644QuickChipDesignExample2LowPowerSiliconBJTLNAfor1.9GHzAbstract:Atwo-stage1.9GHzmonolithiclow-noiseamplifier(LNA)withameasurednoisefigureof2.3dBandanassociatedgainof15dBwasfabricatedinastandardsiliconbipolartransistorarray.Itdissipates5.2mWfroma3Vsupplyincludingthebiascircuitry.Inputreturnlossandisolationare-9dBand-20dB,respectively.1998IEEE.Reprinted,withpermission,from1998IEEEMicrowaveandGuidedWaveLetters,Vol.3,No.3,pp.136-137I.IntroductionInportablecommunicationequipment,suchascellular