13001 pdf,13001三极管资料

13001 pdf,13001三极管资料:TO-251 PlasTIc-Encapsulate Transistors

3DD13001 TRANSISTOR（ NPN ）

FEATURES

Power dissipaTIon

PCM : 1.2 W（Tamb=25℃）

Collector current

ICM : 0.2 A

Collector-base voltage

V(BR)CBO : 600 V

OperaTIng and storage juncTIon temperature range

TJ，Tstg: -55℃ to +150℃