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LF357N芯片资料

上传者: 2022-07-30 18:55:36上传 RAR文件 976.84 KB 热度 8次

amplifiers

to incorporate well matched, high voltage JFETs on the

same chip with standard bipolar transistors (BI-FET™ Technology).

These amplifiers feature low input bias and offset

currents/low offset voltage and offset voltage drift, coupled

with offset adjust which does not degrade drift or

common-mode rejecTIon. The devices are also designed for

high slew rate, wide bandwidth, extremely fast settling TIme,

low voltage and current noise and a low 1/f noise corner.

 

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