infineon IGBT并接
infineonIGBT并接ParallelingofIGBTsEffectivefactorsforcurrentsharing:staticdynamiccommutationinductance-Lσdriver-Lwire,ton,toffdevicecharacteristicsVcesat,TjTj,tdon,tdoffRecommendations:symmetricaldesignofIGBTcurrentpaths(identicalstrayinductances)symmetricaldesignofgatedriver(samedriverstage,seperategateresistors,splittedRgwithappr.1/3ofitint
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