infineon IGBT 5-10kVA控制仿真

infineonIGBTExperimentalandSimulativeInvestigationsofConductedEMIPerformanceofIGBTsfor5-10kVAConvertersAbstractPowerswitcheswithhighdv/dtanddi/dtrateslikeIGBTsarethesourceofEMI.ThepaperpresentsinvestigationsofconductedEMIonIGBTsindifferenttestcircuits.Moreover,resultsareexplainedfromaspecialdevelopedmodelforpredictionofcommonanddifferentialmodeinterferences,thatissuitabletodeterminesolutionsforabetterEMCthroughotherdesignaroundthesemiconductorchip.Resultsandfurtherpossibilitiesarediscussed.1IntroductionIGBTsaremainlyusedinmodernswitchedmodepowersuppliesandpowerdrivesystemsofmiddlepowerrange.Ruggedness,blockingvoltagesupto1600V,highcurrentdensitiesandhighswitchingfrequenciesarea