Investigation on LaF

We present the investigation on LaF3/porous silicon (PS) system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation (EBE). The characteristics of the LaF3/PS system are analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL). XRD confirms the polycrystalli