Mechanism of effect of intrinsic defects on electrical and optical properties of

Near stoichiometric and Cd-poor Cu2CdSnS4 (CCTS) thin films with p-type conductivity were prepared by magnetron sputtering and post-sulfurizing. It is found that the hole concentration of the Cd-poor CCTS is two orders of magnitude higher than that of the near stoichiometric CCTS while its optical b